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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A44
FEATURES
TRANSISTORNPN (c)
TO 92
1.EMITTER
Power dissipation PCM : 0.625 W Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 400 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(c) 1 DC current gain HFE(c) 2 HFE(c) 3 VCE(sat) Collector-emitter saturation voltage VCE(sat) Base-emitter sataration voltage VBE(sat) IC=50 mA, IB=5mA IC=10 mA, IB= 1 mA VCE=20V, Transition frequency fT f =30MHz I =10mA C 50 MHz 0.3 0.75 V V
Tamb=25ae(c)
2.BASE
3. COLLECTOR
123
unless
Test
otherwise
MIN
specified(c)
TYP MAX UNIT V V V 0.1 5 |I A |I A |I A
conditions
Ic= 100|I IE=0 A IC= 1 mA , IB=0 IC=0 IE=0
400 400 5
IE=100|I A VCB=400 V , VCE=400 V , VEB= 4 V,
IC=0 80 70 60
0.1 300
VCE=10V , IC=10 mA VCE=10V, IC=1mA VCE=10V ,IC=100 mA IC=10 mA, IB=1mA
0.2
V
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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